FDS6982 Mosfet 30V 6.3A/8.6A 8-SOIC

SKU: FDS6982

Price exc VAT (Price inc VAT) : £2.25 (£2.70)

In Stock

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  • Category Power MOSFET

  • Channel Mode Enhancement

  • Channel Type N

  • Configuration Dual; Dual Drain

  • Maximum Continuous Drain Current 6.3

  • 8.6A

  • Maximum Drain Source Resistance 0.028@Q1

  • 0.015@Q2O

  • Maximum Drain Source Voltage 30V

  • Maximum Gate Source Voltage ±20V

  • Maximum Operating Temperature 150°C

  • Minimum Operating Temperature -55°C

  • Mounting Surface Mount

  • Number of Elements per Chip 2

  • Product Height 1.5mm

  • Product Length 5mm

  • Product Width 3.99mm

  • Supplier Package SOIC N

  • Typical Fall Time 7@Q1

  • 18@Q2ns

  • Typical Gate Charge @ Vgs 8.5@5V@Q1

  • 18.5@5V@Q2nC

  • Typical Input Capacitance @ Vds 760@10V@Q1

  • 2085@10V@Q2pF

  • Typical Rise Time 14@Q1

  • 11@Q2ns

  • Typical Turn-Off Delay Time 21@Q1

  • 36@Q2ns

  • Typical Turn-On Delay Time 10@Q1

  • 15@Q2ns

Delivery & returns

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  • Category Power MOSFET

  • Channel Mode Enhancement

  • Channel Type N

  • Configuration Dual; Dual Drain

  • Maximum Continuous Drain Current 6.3

  • 8.6A

  • Maximum Drain Source Resistance 0.028@Q1

  • 0.015@Q2O

  • Maximum Drain Source Voltage 30V

  • Maximum Gate Source Voltage ±20V

  • Maximum Operating Temperature 150°C

  • Minimum Operating Temperature -55°C

  • Mounting Surface Mount

  • Number of Elements per Chip 2

  • Product Height 1.5mm

  • Product Length 5mm

  • Product Width 3.99mm

  • Supplier Package SOIC N

  • Typical Fall Time 7@Q1

  • 18@Q2ns

  • Typical Gate Charge @ Vgs 8.5@5V@Q1

  • 18.5@5V@Q2nC

  • Typical Input Capacitance @ Vds 760@10V@Q1

  • 2085@10V@Q2pF

  • Typical Rise Time 14@Q1

  • 11@Q2ns

  • Typical Turn-Off Delay Time 21@Q1

  • 36@Q2ns

  • Typical Turn-On Delay Time 10@Q1

  • 15@Q2ns

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